MRS Proceedings Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068

MRS Proceedings Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068

Description

To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.


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Details

Author(s)
Tingkai Li, Joan M. Redwing, Michael Mastro, Edwin L. Piner, Armin Dadgar
Format
Paperback | 312 pages
Dimensions
152 x 229 x 17mm | 420g
Publication date
05 Jun 2014
Publisher
CAMBRIDGE UNIVERSITY PRESS
Publication City/Country
Cambridge, United Kingdom
Language
English
ISBN10
1107408563
ISBN13
9781107408562